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ISFM1146 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISFM1146 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1146 eq IXTN210P10T P-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= -210A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · DC Choppers · Automatic Test Equipment · Battery Charger Applications Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 15 V ID Drain Current-Continuous -210 A IDM Drain Current-Single Pulse -800 A PD Total Dissipation @TC=25℃ 830 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.15 ℃ /W |
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