1996 Oct 14

2

Philips Semiconductors

Preliminary specification

Schottky barrier double diode

PBYR2150CT

FEATURES

• Low switching losses

• Low forward voltage

• High breakdown voltage

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

APPLICATIONS

• Low power, switched-mode

power supplies

• Rectification

• Polarity protection.

DESCRIPTION

The PBYR2150CT is a Schottky barrier double diode, fabricated in planar

technology, and encapsulated in a SOT223 plastic SMD package.

PINNING

PIN

DESCRIPTION

1

2

common cathode

3

4

common cathode

4

123

Top view

MAM086

4

1

3

2

Fig.1 Simplified outline (SOT223), pin configuration and symbol.

Marking code: BYR215.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

150

V

repetitive peak reverse voltage

−

150

V

crest working reverse voltage

−

150

V

average forward current

−

1A

non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method

−

10

A