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PBYR2150CT Datasheet(PDF) 4 Page - NXP Semiconductors |
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PBYR2150CT Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 5 page ![]() 1996 Oct 14 4 Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT GRAPHICAL DATA (1) Tamb =25 °C. (2) Tamb =60 °C. (3) Tamb =80 °C. (4) Tamb = 100 °C. Fig.2 Forward current as a function of forward voltage; typical values. handbook, halfpage 0.8 0 0.2 0.4 0.6 VF (V) 10 IF (A) 1 10−1 10−2 10−3 10−4 10−5 10−6 MGD766 (4) (3) (2) (1) (1) Tamb =25 °C. (2) Tamb =60 °C. (3) Tamb =80 °C. (4) Tamb = 100 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 150 100 50 0 10−2 10−3 10−4 10−5 10−6 MGD767 VR (V) IR (A) (4) (3) (2) (1) Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz. handbook, halfpage 0 100 250 0 50 100 150 200 Cd (pF) 50 VR (V) MGD768 |
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