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PA2423U-R Datasheet(PDF) 1 Page - SiGe Semiconductor, Inc. |
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PA2423U-R Datasheet(HTML) 1 Page - SiGe Semiconductor, Inc. |
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1 / 10 page  PA2423U RangeCharger TM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary 131-DST-01 Rev 1.1 Apr-18-2006 Confidential 1 of 10 QA041806 Applications Bluetooth tm wireless technology (Class 1) USB dongles PCMCIA, flash cards Access points 2.4 GHz cordless telephone Features +22.5 dBm Output Power Low current 108 mA typical @ POUT = +20 dBm CMOS Enable Interface Power-control and power-down modes 3.3 V single supply operation Thin, lead-free 6 pin QFN package Ordering Information Part Number Package Remark PA2423U 6 pin QFN (0.5 mm height) Samples PA2423U-R 6 pin QFN (0.5 mm height) Tape & Reel PA2423U-EV1 Evaluation Kit Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423U is designed for 2.4 GHz wireless applications, including Bluetooth TM Class1 and 2.4 GHz cordless telephone applications. It delivers +22.5 dBm output power making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input. The PA2423U provides a digital control input for controlling power up and power down modes of operation. The PA2423U operates at 3.3 V DC. At typical output power level (+22.5 dBm), the current consumption is 135 mA. The silicon/silicon-germanium structure of the PA2423U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. The device is pin for pin compatible to the PA2423L. Functional Block Diagram Stage 1 Stage 2 Interstage Match Bias Generator Control Circuitry V CT L V CC0 V RA MP OUT/V CC2 V CC1 GND GND IN Figure 1: PA2423U Block Diagram |
Similar Part No. - PA2423U-R |
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Similar Description - PA2423U-R |
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