PA2423U-R datasheet(3/10 Pages) SIGE

3 / 10 page

PA2423U

RangeCharger

TM 2.4 GHz Bluetoothtm Power Amplifier IC

Preliminary

131-DST-01 Rev 1.1 Apr-18-2006

Confidential

3 of 10

QA041806

Absolute Maximum Ratings

Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is

ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.

Symbol

Parameter

Min.

Max.

Unit

VCC

Supply Voltage

-0.3

+3.6

VCTL

Control Voltage

-0.3

VCC

VRAMP

Ramping Voltage

-0.3

VCC

RF Input Power

dBm

Operating Temperature Range

-40

+85

°C

TSTG

Storage Temperature Range

-40

+150

°C

Maximum Junction Temperature

+150

°C

DC Electrical Characteristics

Conditions: VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, TA = 25

°C, f = 2.45 GHz, input and output

externally matched to 50Ω unless otherwise noted.

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC

Supply Voltage

2.7

3.3

3.6

ICC

Supply Current (ICC = IVCC0 + IVCC1 + IVCC2),

VCTL = 3.3 V, POUT_MAX ≤ 22.5 dBm

135

160

∆IccTEMP

Supply Current variation over temperature

from TA = 25

°C

(-40

°C < TA < +85 °C)

VCTL

PA Output Power Control Voltage Range

VCC

ICTL

Current sunk by VCTL pin

200

250

µA

Logic High Voltage

2.0

VRAMP

Logic Low Voltage

0.8

Istdby

Leakage Current when VRAMP = 0 V, No RF,

VCTL = high

0.5

µA

PA2423U-R Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

PA2423U-R Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

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