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BU4530AL Datasheet(PDF) 3 Page - NXP Semiconductors |
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BU4530AL Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4530AL Fig.3. Switching times waveforms. Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. High and low DC current gain. Fig.7. High and low DC current gain. Fig.8. Typical base-emitter saturation voltage. IC IB VCE ICsat IBend 32us 13us 10us t t t TRANSISTOR DIODE 0.01 0.1 1 10 100 1 10 100 - - -Tj = 85 C Tj = 25 C VCE = 1V IC / A hFE ICsat 90 % 10 % tf ts IB1 IC IB t t - IB2 0.01 0.1 1 10 100 1 10 100 - - -Tj = 85 C Tj = 25 C VCE = 5V IC / A hFE + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 012 34 0.6 0.7 0.8 0.9 1 VBEsat /V IB / A - - -Ths = 85 C Ths = 25 C IC = 8 A IC = 10 A April 1999 3 Rev 1.100 |
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