Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4530AL

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

-

1.0

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

BV

EBO

Base-emitter breakdown voltage

I

7.5

12.8

-

V

V

CEOsust

Collector-emitter breakdown voltage I

800

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

3.0

V

V

BEsat

Base-emitter saturation voltage

I

0.83

0.92

1.01

V

h

FE

DC current gain

I

-

12

-

h

FE

I

4.8

6.6

8.5

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (32 kHz line

I

deflection dynamic test circuit).

t

s

Turn-off storage time

3.0

4.0

µs

t

f

Turn-off fall time

0.20

0.26

µs

Switching times (90 kHz line

I

deflection dynamic test circuit).

t

s

Turn-off storage time

2

-

µs

t

f

Turn-off fall time

0.12

-

µs

Fig.1. Test circuit for V

Fig.2. Oscilloscope display for V

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

100R

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

1 Measured with half sine-wave voltage (curve tracer).

April 1999

2

Rev 1.100