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REF192 Datasheet(PDF) 10 Page - Analog Devices |
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REF192 Datasheet(HTML) 10 Page - Analog Devices |
10 / 24 page REV. E –10– REF19x Series REF195–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Condition Min Typ Max Unit TEMPERATURE COEFFICIENT 1, 2 E Grade TCVO/ °CI OUT = 0 mA 2 ppm/ °C F Grade 5 ppm/ °C G Grade 3 10 ppm/ °C LINE REGULATION 4 E Grade VO / VIN 5.20 V ≤ V S ≤ 15 V, I OUT = 0 mA 5 ppm/V F and G Grades 10 ppm/V LOAD REGULATION 4 E Grade VO / VLOAD VS = 6.45 V, 0 mA ≤ IOUT ≤ 20 mA 5 ppm/mA F and G Grades 10 ppm/mA DROPOUT VOLTAGE VS – VO VS = 5.60 V, ILOAD = 10 mA 0.60 V VS = 6.45 V, ILOAD = 20 mA 1.45 V NOTES 1For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device. 2TCV O is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C. TCVO =(VMAX –VMIN)/ VO(TMAX –TMIN). 3Guaranteed by characterization. 4Line and load regulation specifications include the effect of self-heating. Specifications subject to change without notice. REF196–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Condition Min Typ Max Unit INITIAL ACCURACY 1 G Grade VO IOUT = 0 mA 3.290 3.3 3.310 V LINE REGULATION 2 G Grades VO / VIN 3.50 V ≤ VS ≤ 15 V, IOUT = 0 mA 4 8 ppm/V LOAD REGULATION 2 G Grade VO / VLOAD VS = 5.0 V, 0 mA ≤ I OUT ≤ 30 mA 6 15 ppm/mA DROPOUT VOLTAGE VS – VO VS = 4.1 V, ILOAD = 10 mA 0.80 V VS = 4.3 V, ILOAD = 30 mA 1.00 V LONG-TERM STABILITY 3 DVO 1000 Hours @ 125 °C 1.2 mV NOISE VOLTAGE eN 0.1 Hz to 10 Hz 33 µV p-p NOTES 1Initial accuracy includes temperature hysteresis effect. 2Line and load regulation specifications include the effect of self-heating. 3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at 125 °C, with an LTPD of 1.3. Specifications subject to change without notice. (@ VS = 5.20 V, –40 C ≤ TA ≤ +125 C, unless otherwise noted.) (@ VS = 3.5 V, TA = 25 C, unless otherwise noted.) |
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