M58WR032EB datasheet(1/81 Pages) STMICROELECTRONICS

Part #	M58WR032EB

Description	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	81 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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April 2004

M58WR032ET

M58WR032EB

32 Mbit (2Mb x 16, Multiple Bank, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VDD = 1.65V to 2.2V for Program, Erase

and Read

–VDDQ = 1.65V to 3.3V for I/O Buffers

–VPP = 12V for fast Program (optional)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode: 54MHz

–

Asynchronous/ Synchronous Page Read

mode

–

Random Access: 70, 80, 100ns

■

PROGRAMMING TIME

–

8µs by Word typical for Fast Factory

Program

–

Double/Quadruple Word Program option

–

Enhanced Factory Program options

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

DUAL OPERATIONS

–

Program Erase in one Bank while Read in

others

–

No delay between Read and Write

operations

■

BLOCK LOCKING

–

All blocks locked at Power up

–

Any combination of blocks can be locked

–WP for Block Lock-Down

■

SECURITY

–

128 bit user programmable OTP cells

–

64 bit unique device number

–

One parameter block permanently

lockable

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

–

Top Device Code, M58WR032ET: 8814h

–

Bottom Device Code, M58WR032EB:

8815h

VFBGA56 (ZB)

7.7 x 9 mm

FBGA

Similar Part No. - M58WR032EB

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