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M36W0R5020T0 Datasheet (PDF) - STMicroelectronics

M36W0R5020T0 Datasheet PDF - STMicroelectronics
Part # M36W0R5020T0
Download  M36W0R5020T0 Download

File Size   184.58 Kbytes
Page   26 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

M36W0R5020T0 Datasheet (PDF)

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M36W0R5020T0 Datasheet PDF - STMicroelectronics

Part # M36W0R5020T0
Download  M36W0R5020T0 Click to download

File Size   184.58 Kbytes
Page   26 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

M36W0R5020T0 Datasheet (HTML) - STMicroelectronics

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M36W0R5020T0 Product details

SUMMARY DESCRIPTION
The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package:
■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B
■ and a 4-Mbit SRAM.
Recommended operating conditions do not allow more than one memory to be active at the same time.

FEATURES SUMMARY
■ MULTI-CHIP PACKAGE
    – 1 die of 32 Mbit (2Mb x 16) Flash Memory
    – 1 die of 4 Mbit (256Kb x16) SRAM
■ SUPPLY VOLTAGE
    – VDDF = VDDQ = VDDS = 1.7 to 1.95V
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code (Top Flash Configuration): 8814h
    – Device Code (Bottom Flash Configuration): 8815h
■ PACKAGE
    – Compliant with Lead-Free Soldering Processes
    – Lead-Free Versions

FLASH MEMORY
■ PROGRAMMING TIME
    – 8µs by Word typical for Fast Factory Program
    – Double/Quadruple Word Program option
    – Enhanced Factory Program options
■ MEMORY BLOCKS
    – Multiple Bank Memory Array: 4 Mbit Banks
    – Parameter Blocks (Top or Bottom location)
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Synchronous Burst Read mode: 66MHz
    – Asynchronous/ Synchronous Page Read mode
    – Random Access: 70ns
■ DUAL OPERATIONS
    – Program Erase in one Bank while Read in others
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power-up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ SECURITY
    – 128-bit user programmable OTP cells
    – 64-bit unique device number
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

SRAM
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.0V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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