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STM32F469AI Datasheet(PDF) 95 Page - STMicroelectronics

Part # STM32F469AI
Description  Arm® Cortex®-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/3844KB RAM, USB OTG HS/FS, Ethernet, FMC, dual Quad-SPI, Graphical accelerator, Camera IF, LCD-TFT & MIPI DSI
PDF  220 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F469AI Datasheet(HTML) 95 Page - STMicroelectronics

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DS11189 Rev 7
95/220
STM32F469xx
Electrical characteristics
191
5.3.2
VCAP1/VCAP2 external capacitor
Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to
the VCAP1/VCAP2 pins. CEXT is specified in Table 19.
Figure 26. External capacitor CEXT
1. Legend: ESR is the equivalent series resistance.
7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.
Table 18. Limitations depending on the operating power supply range
Operating
power
supply range
ADC
operation
Maximum Flash
memory access
frequency with
no wait states
(fFlashmax)
Maximum HCLK
frequency
vs.
Flash memory wait
states (1)(2)
I/O operation
Possible Flash
memory
operations
VDD =
1.7 to 2.1 V(3)
Conversion time
up to 1.2 Msps
20 MHz(4)
168 MHz
with 8 wait states
and over-drive OFF
No I/O
compensation
8-bit erase
and program
operations only
VDD =
2.1 to 2.4 V
22 MHz
180 MHz
with 8 wait states
and over-drive ON
16-bit erase
and program
operations
VDD =
2.4 to 2.7 V
Conversion time
up to 2.4 Msps
24 MHz
180 MHz
with 7 wait states
and over-drive ON
I/O compensation
works
16-bit erase
and program
operations
VDD =
2.7 to 3.6 V(5)
30 MHz
180 MHz
with 5 wait states
and over-drive ON
32-bit erase
and program
operations
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2).
4. Prefetch is not available.
5. When VDDUSB is connected to VDD, the voltage range for USB full speed PHYs can drop down to 2.7 V. However the
electrical characteristics of D- and D+ pins will be degraded between 2.7 and 3 V.
MS19044V2
ESR
R Leak
C



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