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ISCN232D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCN232D
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN232D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN232D Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN232D Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN232D
DESCRIPTION
·
High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 450V (Min)
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
Collector Power Dissipation
@ Ta=25℃
1.15
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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