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P062ABD8 Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P062ABD8 Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  P062ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. IAS Pulsed Drain Current 1 Avalanche Current 3.5 RqJA Junction-to-Case Lead Temperature ( 1/ 16” from case for 10 sec.) ID Gate-Source Voltage 30 EAS THERMAL RESISTANCE TC= 100°C Operating Junction & Storage Temperature Range SYMBOL ID TC= 25 °C 25V Continuous Drain Current TC= 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Junction-to-Ambient 6mΩ @V GS = 10V 60A TC= 25 °C Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg IDM TYPICAL PD RqJC °C / W SYMBOL 60 LIMITS 150 38 131 VGS ±20 36 A -55 to 150 MAXIMUM mJ 14 V W 40 °C TL 275 UNITS REV 1.0 1 2014/4/29 |
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