FPD200

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

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FEATURES

♦ 19 dBm Linear Output Power at 12 GHz

♦ 12 dB Power Gain at 12 GHz

♦ 17 dB Maximum Stable Gain at 12 GHz

♦ 12 dB Maximum Stable Gain at 18 GHz

♦ 45% Power-Added Efficiency

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DESCRIPTION AND APPLICATIONS

The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25

µm by 200 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance.

The epitaxial structure and processing have been optimized for reliable medium-

plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

18

19

dBm

10.5

12.0

dB

Power-Added Efficiency

PAE

45

%

f = 12 GHz

f = 24 GHz

SSG

16

10.5

17

12

dB

Saturated Drain-Source Current

45

60

75

mA

Maximum Drain-Source Current

120

mA

Transconductance

80

mS

Gate-Source Leakage Current

1

10

µA

Pinch-Off Voltage

0.7

1.0

1.3

V

Gate-Source Breakdown Voltage

12.0

14.0

V

Gate-Drain Breakdown Voltage

14.5

16.0

V

Thermal Resistivity (see Notes)

280

°C/W

DRAIN

BOND

PAD (1X)

SOURCE

BOND

PAD (2x)

GATE

BOND

PAD (1X)

DIE SIZE (

µm): 400 x 400

DIE THICKNESS: 75

µm

BONDING PADS (

µm): >80 x 80