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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Preliminary data sheet

Rev. 01 — 5 April 2005

3 of 8

Philips Semiconductors

BAP55L

Silicon PIN diode

|s

2

isolation

f = 900 MHz

-

17.6

-

dB

f = 1800 MHz

-

13

-

dB

f = 2450 MHz

-

11.1

-

dB

insertion loss

f = 900 MHz

-

0.25

-

dB

f = 1800 MHz

-

0.27

-

dB

f = 2450 MHz

-

0.29

-

dB

f = 900 MHz

-

0.17

-

dB

f = 1800 MHz

-

0.19

-

dB

f = 2450 MHz

-

0.21

-

dB

f = 900 MHz

-

0.07

-

dB

f = 1800 MHz

-

0.09

-

dB

f = 2450 MHz

-

0.12

-

dB

f = 900 MHz

-

0.05

-

dB

f = 1800 MHz

-

0.07

-

dB

f = 2450 MHz

-

0.09

-

dB

charge carrier life

time

when switched from

-

0.28

-

µs

series inductance

-

0.6

-

nH

Table 6:

Symbol Parameter

Conditions

Min

Typ

Max

Unit