BAP55L datasheet(4/8 Pages) PHILIPS

4 / 8 page

9397 750 14811

Preliminary data sheet

Rev. 01 — 5 April 2005

4 of 8

Philips Semiconductors

BAP55L

Silicon PIN diode

f = 100 MHz; Tj =25 °C.

f = 1 MHz; Tj =25 °C.

Fig 1.

Forward resistance as a function of forward

current; typical values

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values

(1) IF = 100 mA.

(2) IF =10mA.

(3) IF = 1 mA.

(4) IF = 0.5 mA.

Diode inserted in series with a 50

Ω stripline circuit

and biased via the analyzer Tee network.

Tamb =25 °C.

Diode zero biased and inserted in series with a 50

Ω

stripline circuit.

Tamb =25 °C.

Fig 3.

Insertion loss (

|s21|2) of the diode as a function

of frequency; typical values

Fig 4.

Isolation (

|s12|2) of the diode as a function of

frequency; typical values

IF (mA)

10−1

102

001aac628

102

(

Ω)

10−1

VR (V)

020

510

001aac629

200

100

300

400

(fF)

001aac630

f (MHz)

−0.50

−0.75

−0.25

|S21|2

(dB)

−1.00

(1)

(2)

(3)

(4)

001aac631

f (MHz)

−20

−30

−10

|S12|2

(dB)

−40

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