Data Sheet D14655EJ3V0DS

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2SJ607

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB (MP-25)

2) TO-262 (MP-25 Fin Cut)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0 TYP.

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

10 TYP.

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

4

3) TO-263 (MP-25ZJ)

4) TO-220SMD (MP-25Z)

Note

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2

10 TYP.

0.5R

TYP.

0.8R

TYP.

10 TYP.

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

0.5R

TYP.

0.8R

TYP.

0.75±0.3

1.Gate

2.Drain

3.Source

4.Fin (Drain)

Note This package is produced only in Japan.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Remark The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually used,

an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

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