2SJ607 datasheet(2/8 Pages) NEC

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Data Sheet D14655EJ3V0DS

2SJ607

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS =

−60 V, VGS = 0 V

−10

µA

Gate Leakage Current

IGSS

VGS =

m 20 V, VDS = 0 V

m 10

µA

Gate Cut-off Voltage

VGS(off)

VDS =

−10 V, ID = −1 mA

−1.5

−2.0

−2.5

Forward Transfer Admittance

| yfs |VDS =

−10 V, ID = −42 A

Drain to Source On-state Resistance

RDS(on)1

VGS =

−10 V, ID = −42 A

9.1

Ω

RDS(on)2

VGS =

−4.0 V, ID = −42 A

Ω

Input Capacitance

Ciss

VDS =

−10 V

7500

Output Capacitance

Coss

VGS = 0 V

1800

Reverse Transfer Capacitance

Crss

f = 1 MHz

430

Turn-on Delay Time

td(on)

VDD =

−30 V, ID = −42 A

Rise Time

VGS =

−10 V

Turn-off Delay Time

td(off)

RG = 0

Ω

340

Fall Time

160

Total Gate Charge

VDD=

−48 V

188

Gate to Source Charge

QGS

VGS =

−10 V

Gate to Drain Charge

QGD

ID =

−83 A

Body Diode Forward Voltage

VF(S-D)

IF = 83 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

IF = 83 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs

150

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

Ω

PG.

VDD

VGS =

−20 → 0 V

BVDSS

IAS

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

VGS (

−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VDS

Wave Form

VGS (

−)

10%

90%

10%

VDS (

−)

90%

td(on)

td(off)

10%

VDS

ton

toff

PG.

Ω

D.U.T.

VDD

IG =

−2 mA

−

VGS

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