IRF630 Datasheet(PDF) - International Rectifier

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IRF630 Datasheet (PDF) - International Rectifier

IRF630 Datasheet PDF - International Rectifier


Part #	IRF630

Download	IRF630 Download

File Size	176.29 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

IRF630 Datasheet (PDF)

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IRF630 Datasheet PDF - International Rectifier


Part #	IRF630

Download	IRF630 Click to download

File Size	176.29 Kbytes

Page	6 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

IRF630 Datasheet (HTML) - International Rectifier

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IRF630 Datasheet HTML 6Page - International Rectifier

IRF630 Product details

Description
Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Similar Part No. - IRF630

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRF630	97Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
Fairchild Semiconductor	IRF630	177Kb / 6P	N-Channel Power MOSFETs, 12A, 150-200 V
Intersil Corporation	IRF630	62Kb / 7P	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
STMicroelectronics	IRF630	190Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Similar Description - IRF630

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRC	229Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRFI630G	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
	IRFP450LC	340Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
	IRFPC60	162Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A)
	IRHN7230	513Kb / 14P	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRL630	324Kb / 8P	Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
	IRL630S	352Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRLI630G	337Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
	IRF630PBF	2Mb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRF630SPBF	986Kb / 8P	HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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