Features
■ MULTIPLE MEMORY PRODUCT
■ 16 Mbit (1Mb x 16) Boot Block Flash Memory
■ 2 Mbit (128Kb x 16) SRAM
■ SUPPLY VOLTAGE
■ VDDF = VDDS = 2.7V to 3.3V
■ VDDQF = VDDS = 2.7V to 3.3V
■ VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
■ Manufacturer Code: 20h
■ Top Device Code, M36W216TI: 88CEh
■ Bottom Device Code, M36W216BI: 88CFh FLASH MEMORY
■ MEMORY BLOCKS
■ Parameter Blocks (Top or Bottom location)
■ Main Blocks
■ PROGRAMMING TIME
■ 10µs typical
■ Double Word Programming Option
■ BLOCK LOCKING
■ All blocks locked at Power up
■ Any combination of blocks can be locked
■ WPF for Block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ 64 bit Security Code
■ SECURITY
■ 64 bit user programmable OTP cells
■ 64 bit unique device identifier
■ One parameter block permanently lockable SRAM
■ 2 Mbit (128K x 16 bit)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS