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M28W160BT Datasheet (PDF) - STMicroelectronics

M28W160BT Datasheet PDF - STMicroelectronics
Part # M28W160BT
Download  M28W160BT Download

File Size   337.77 Kbytes
Page   45 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160BT Datasheet (PDF)

Go To PDF Page Download Datasheet
M28W160BT Datasheet PDF - STMicroelectronics

Part # M28W160BT
Download  M28W160BT Click to download

File Size   337.77 Kbytes
Page   45 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160BT Datasheet (HTML) - STMicroelectronics


M28W160BT Product details

SUMMARY DESCRIPTION
The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.
Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.
Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME
   – 10µs typical
   – Double Word Programming Option
■ COMMON FLASH INTERFACE
   – 64 bit Security Code
■ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
■ BLOCK PROTECTION on TWO PARAMETER BLOCKS
   – WP for Block Protection
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W160BT: 90h
   – Bottom Device Code, M28W160BB: 91h




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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