DESCRIPTION
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576
words  8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies
for forming the nonvolatile memory cells.
MB85AS8MT adopts the Serial Peripheral Interface (SPI).
MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85AS8MT can be used for 1  106 rewrite operations.
FEATURES
• Bit configuration : 8 Mbits (1,048,576 words  8 bits)
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Write buffer size : 256 bytes
• Operating frequency : 10 MHz (Max)
• Data endurance : 1  106 times / 4bytes*
*4 bytes are selected by A1 to A0.
• Data retention : 10 years (+85 C)
• Operating power supply voltage : 1.6 V to 3.6 V
• Operating power supply current : Write current 1.5 mA (Typ)
Read current 0.15 mA (Typ@5 MHz)
Standby current 60 A (Typ)
Sleep current 6 A (Typ)
• Operation ambient temperature range : -40 C to +85 C
• Package : 11-pin WLP
RoHS compliant