DESCRIPTION
MB85AS12MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864
words  8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies
for forming the nonvolatile memory cells.
MB85AS12MT adopts the Serial Peripheral Interface (SPI).
MB85AS12MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85AS12MT can be used for 5  105 rewrite operations.
FEATURES
Bit configuration : 12 Mbits (1,572,864 words  8 bits)
Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Write buffer size : 256 bytes
Operating frequency : 10 MHz (Max)
Data endurance : 5  105 times / 4bytes*
*4 bytes are selected by A1 to A0.
Data retention : 10 years (+85 C)
Operating power supply voltage : 1.6 V to 3.6 V
Operating power supply current : Write current 1.5 mA (Typ)
Read current 0.15 mA (Typ@5 MHz)
Standby current 65 A (Typ)
Sleep current 6 A (Typ)
Operation ambient temperature range : -40 C to +85 C
Package : 11-pin WLP
RoHS compliant