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STAV22170AY2 Datasheet (PDF) - Innogration Technologies, Inc.
STAV22170AY2 Datasheet PDF - Innogration Technologies, Inc.
Part # STAV22170AY2
Download  STAV22170AY2 Download
File Size   1201.16 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 170W,1.8-2.4GHz RF Power Transistor

STAV22170AY2 Datasheet (PDF)

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STAV22170AY2 Datasheet PDF - Innogration Technologies, Inc.

Part # STAV22170AY2
Download  STAV22170AY2 Click to download

File Size   1201.16 Kbytes
Page   6 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 170W,1.8-2.4GHz RF Power Transistor

STAV22170AY2 Datasheet (HTML) - Innogration Technologies, Inc.


STAV22170AY2 Product details

Description
The STAV22170AY2 is a single ended 170watt, GaN HEMT, ideal for applications from 1.8 to 2.2GHz.
It is an input matched transistor capable of supporting CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Sub-2GHz pulse or CW amplifier
 4G LTE power amplifier
 Wideband jammer




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