| Manufacturer | Part # | Datasheet | Description |
 Taiwan Semiconductor Co... |
UGF5J
|
163Kb/2P |
Isolated 5.0 Amps Glass Passivated Super Fast Rectifier
|
 Shenzhen Luguang Electr... |
UGF5J
|
198Kb/2P |
Glass Passivated Super Fast Rectifier
|
 Taiwan Semiconductor Co... |
UGF5J
|
146Kb/4P |
Isolated High Voltage Ultrafast Rectifiers
|
 Vishay Siliconix |
UGF5JT
|
44Kb/3P |
Ultrafast Rectifiers
02-Jul-02 |
|
UGF5JT
|
143Kb/5P |
High Voltage Ultrafast Rectifier
09-Nov-07 |
|
UGF5JT-E3/45
|
143Kb/5P |
High Voltage Ultrafast Rectifier
09-Nov-07 |
|
UGF5JTHE3/45
|
143Kb/5P |
High Voltage Ultrafast Rectifier
09-Nov-07 |
 Taiwan Semiconductor Co... |
UGF5J
|
146Kb/4P |
Isolated High Voltage Ultrafast Rectifiers
|
 Cree, Inc |
UGF09030
|
197Kb/7P |
30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
|
UGF09030P
|
197Kb/7P |
30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
|
UGF09085
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
|
UGF09085F
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
|
UGF09085P
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
 Vishay Siliconix |
UGF10
|
80Kb/3P |
Dual Ultrafast Soft Recovery Rectifiers
27-Jun-03 |
|
UGF10
|
46Kb/3P |
Dual Ultrafast Soft Recovery Rectifier
03-Jul-02 |
 Taiwan Semiconductor Co... |
UGF1004G
|
238Kb/3P |
10.0AMPS. Isolated Glass Passivated Ultra Fast Rectifiers
|
|
UGF1004G
|
225Kb/4P |
Isolated Ultra Fast Rectifiers
|
 Thinki Semiconductor Co... |
UGF1004G
|
1Mb/2P |
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
|
 Taiwan Semiconductor Co... |
UGF1004GA
|
221Kb/3P |
Isolated Ultra Fast Rectifiers
|
 Thinki Semiconductor Co... |
UGF1004GA
|
871Kb/2P |
10.0 Amperes Insulated Package Dual Common Anode Ultra Fast Recovery Rectifiers
|