| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
RJK6002DPE-00J3
|
82Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DPD
|
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching
|
 VBsemi Electronics Co.,... |
RJK6002DPD
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
RJK6002DPD
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Inchange Semiconductor ... |
RJK6002DPD
|
276Kb/2P |
isc N-Channel MOSFET Transistor
|
 Renesas Technology Corp |
RJK6002DPD-00-J2
|
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6002DPD
|
113Kb/9P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6002DPE
|
82Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
 Inchange Semiconductor ... |
RJK6002DPE
|
327Kb/2P |
isc N-Channel MOSFET Transistor
|
|
RJK6002DPH
|
286Kb/2P |
isc N-Channel MOSFET Transistor
|
 Renesas Technology Corp |
RJK6002DPH-E0
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DPH-E0T2
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DPH-E0
|
99Kb/7P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE-00Z0
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6002DJE
|
69Kb/4P |
600V - 2A - MOS FET High Speed Power Switching
|
|
RJK6006DPD
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK6006DPD
|
80Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
 SHENZHEN DOINGTER SEMIC... |
RJK6006DPD
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Inchange Semiconductor ... |
RJK6006DPD
|
276Kb/2P |
isc N-Channel MOSFET Transistor
|