| Manufacturer | Part # | Datasheet | Description |
Samsung semiconductor |
IRF331
|
208Kb/5P |
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF331
|
177Kb/6P |
N-Channel Power MOSFETs, 5.5A, 350 V/400V
|
New Jersey Semi-Conduct... |
IRF331
|
848Kb/3P |
N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
|
Inchange Semiconductor ... |
IRF331
|
49Kb/2P |
isc N-Channel MOSFET Transistor
|
International Rectifier |
IRF3315
|
124Kb/8P |
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
|
Inchange Semiconductor ... |
IRF3315
|
338Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRF3315L
|
197Kb/10P |
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
|
Inchange Semiconductor ... |
IRF3315L
|
300Kb/2P |
Isc N-Channel MOSFET Transistor
|
International Rectifier |
IRF3315LPBF
|
386Kb/10P |
HEXFET Power MOSFET
|
|
IRF3315LPBF
|
391Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF3315PBF
|
143Kb/8P |
HEXFET Power MOSFET
|
|
IRF3315PBF
|
237Kb/8P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF3315PBF
|
237Kb/8P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF3315S
|
197Kb/10P |
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
|
Inchange Semiconductor ... |
IRF3315S
|
189Kb/2P |
Isc N-Channel MOSFET Transistor
|
International Rectifier |
IRF3315SPBF
|
386Kb/10P |
HEXFET Power MOSFET
|
|
IRF3315SPBF
|
391Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF3315SPBF
|
391Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand