| Manufacturer | Part # | Datasheet | Description |
 Advanced Power Electron... |
AP9410GH-HF
|
100Kb/4P |
Low On-resistance, Simple Drive Requirement
|
|
AP9410GH-HF
|
100Kb/4P |
Simple Drive Requirement
|
|
AP9410GH-HF
|
98Kb/5P |
Simple Drive Requirement
|
|
AP9410GM-HF
|
101Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9410GM-HF
|
101Kb/4P |
Simple Drive Requirement
|
|
AP9410GM-HF
|
56Kb/5P |
Simple Drive Requirement
|
|
AP9410GMT-HF
|
69Kb/4P |
Capable of 2.5V Gate Drive, SO-8 Compatible
|
|
AP9410GMT-HF
|
64Kb/4P |
Simple Drive Requirement
|
|
AP9410GMT-HF
|
50Kb/5P |
Simple Drive Requirement
|
|
AP9410AGH-HF
|
101Kb/4P |
Low On-resistance, Simple Drive Requirement
|
|
AP9410AGH-HF
|
101Kb/4P |
Simple Drive Requirement
|
|
AP9410AGH-HF
|
52Kb/5P |
Fast Switching Characteristic
|
|
AP9410AGM-HF
|
63Kb/4P |
Simple Drive Requirement, Fast Switching Characteristic
|
|
AP9410AGM-HF
|
63Kb/4P |
Simple Drive Requirement
|
|
AP9410AGM-HF
|
53Kb/5P |
Fast Switching Characteristic
|
|
AP9412AGH
|
171Kb/5P |
Lower Gate Charge, Simple Drive Requirement
|
 SHENZHEN DOINGTER SEMIC... |
AP9412AGH
|
1,013Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9412AGI
|
129Kb/5P |
Single Drive Requirement, Full Isolation Package
|
|
AP9412AGM
|
99Kb/4P |
Simple Drive Requirement, Ultra_Low On-resistance
|
|
AP9412AGM-HF
|
99Kb/4P |
Simple Drive Requirement, Ultra_Low On-resistance
|