| Manufacturer | Part # | Datasheet | Description |
 NEC |
NE32684A
|
194Kb/5P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32684A-T1
|
194Kb/5P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32684AS
|
194Kb/5P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
| Search Partnumber :
Start with "NE32684" -
Total : 47 ( 1/3 Page) |
 NEC |
NE32684A
|
194Kb/5P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32684A-T1
|
194Kb/5P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32684AS
|
194Kb/5P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32000
|
247Kb/7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
|
NE32083A
|
247Kb/7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
|
NE32084
|
247Kb/7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
 California Eastern Labs |
NE321000
|
135Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE321000
|
141Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
 Renesas Technology Corp |
NE321000
|
215Kb/14P |
HETERO JUNCTION FIELDEFFECT TRANSISTOR
1999 |
 NEC |
NE321000
|
48Kb/12P |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
 California Eastern Labs |
NE321000
|
135Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
 NEC |
NE3210S01
|
62Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3210S01
|
414Kb/7P |
SUPER LOW NOISE HJ FET
|
 Renesas Technology Corp |
NE3210S01
|
197Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
 NEC |
NE3210S01-T1
|
62Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3210S01-T1
|
414Kb/7P |
SUPER LOW NOISE HJ FET
|
 Renesas Technology Corp |
NE3210S01-T1
|
197Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |