| Manufacturer | Part # | Datasheet | Description |
 Shenzhen Luguang Electr... |
LGE024N03-5DL8
|
873Kb/5P
|
N-Channel Enhancement Mode MOSFET
Revision:20170701-P1
|
|
LGE07TD60BK
|
888Kb/7P
|
600V, 7A, Trench FS II Fast IGBT
Revision:20170701-P1
|
| Search Partnumber :
Start with "LGE0" -
Total : 100 ( 1/5 Page) |
 Shenzhen Luguang Electr... |
LGE024N03-5DL8
|
873Kb/5P |
N-Channel Enhancement Mode MOSFET
Revision:20170701-P1 |
|
LGE07TD60BK
|
888Kb/7P |
600V, 7A, Trench FS II Fast IGBT
Revision:20170701-P1 |
|
LGE3401L
|
1Mb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
LGE3D02065F
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20240623-P1 |
|
LGE3D02120A
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20240809-P1 |
|
LGE3D02120F
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20230214-P1 |
|
LGE3D04065A
|
2Mb/4P |
Silicon Carbide Schottky Diode
|
|
LGE3D04065F
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20240623-P1 |
|
LGE3D04065G
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20200701-P1 |
|
LGE3D05120A
|
1Mb/4P |
Silicon CarbideSchottkyDiode
Revision:20220701-P1 |
|
LGE3D06065A
|
2Mb/4P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
|
LGE3D06065AF
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20240217-P1 |
|
LGE3D06065F
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
|
LGE3D06065G
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
|
LGE3D06065N
|
2Mb/4P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
|
LGE3D08065A
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20240217-P1 |
|
LGE3D08065F
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20220623-P5 |
|
LGE3D08120A
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20240217-P1 |