| Manufacturer | Part # | Datasheet | Description |
 Fairchild Semiconductor |
FDS8949
|
342Kb/6P
|
Dual N-Channel Logic Level PowerTrench MOSFET
|
|
FDS8949
|
544Kb/6P
|
Dual N-Channel Logic Level PowerTrench짰 MOSFET
|
 VBsemi Electronics Co.,... |
FDS8949-NL
|
1Mb/9P
|
Dual N-Channel 60 V (D-S) 175 째C MOSFET
|
 Fairchild Semiconductor |
FDS8949
|
544Kb/6P
|
Dual N-Channel Logic Level PowerTrench짰 MOSFET
|
|
FDS8949_F085
|
544Kb/6P
|
Dual N-Channel Logic Level PowerTrench MOSFET
|
| Search Partnumber :
Start with "FDS8949" -
Total : 37 ( 1/2 Page) |
 Fairchild Semiconductor |
FDS8947A
|
239Kb/5P |
Dual P-Channel Enhancement Mode Field Effect Transistor
|
 VBsemi Electronics Co.,... |
FDS8949-NL
|
1Mb/9P |
Dual N-Channel 60 V (D-S) 175 째C MOSFET
|
 Fairchild Semiconductor |
FDS8949
|
544Kb/6P |
Dual N-Channel Logic Level PowerTrench짰 MOSFET
|
|
FDS8949_F085
|
544Kb/6P |
Dual N-Channel Logic Level PowerTrench MOSFET
|
|
FDS89141
|
245Kb/6P |
Dual N-Channel PowerTrench짰 MOSFET 100 V, 3.5 A, 62 m廓
|
|
FDS89161
|
266Kb/6P |
Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓
|
 Guangdong Kexin Industr... |
FDS89161
|
2Mb/5P |
N-Channel Enhancement MOSFET
|
 Fairchild Semiconductor |
FDS89161LZ
|
251Kb/7P |
Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A
|
 ON Semiconductor |
FDS89161LZ
|
399Kb/8P |
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ
September 2015 Rev. 1.2 |
 Fairchild Semiconductor |
FDS8926A
|
201Kb/8P |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
 VBsemi Electronics Co.,... |
FDS8926A-NL
|
1Mb/9P |
Dual N-Channel 30-V (D-S) MOSFET
|
 Fairchild Semiconductor |
FDS8928A
|
285Kb/12P |
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
|
FDS8934
|
417Kb/8P |
Dual P-Channel Enhancement Mode Field Effect Transistor
|
|
FDS8934A
|
417Kb/8P |
Dual P-Channel Enhancement Mode Field Effect Transistor
|
|
FDS8935
|
225Kb/6P |
Dual P-Channel PowerTrench짰 MOSFET -80 V, -2.1 A, 183 m廓
|