| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
BGA7H1N6E6327
|
33Kb/1P
|
Material Content Data Sheet
4. August 2015
|
|
BGA7H1N6E6327XTSA1
|
220Kb/2P
|
Infineon?셲 New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
04/2014
|
|
BGA7H1N6E6327
|
33Kb/1P
|
Material Content Data Sheet
4. August 2015
|
| Search Partnumber :
Start with "BGA7H1N6E6327" -
Total : 48 ( 1/3 Page) |
 Infineon Technologies A... |
BGA7H1N6E6327XTSA1
|
220Kb/2P |
Infineon?셲 New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
04/2014 |
|
BGA7H1N6E6327
|
33Kb/1P |
Material Content Data Sheet
4. August 2015 |
|
BGA7H1N6
|
1Mb/19P |
Silicon Germanium Low Noise Amplifier for LTE
Revision 3.1, 2014-02-11 |
|
BGA7H1N6
|
220Kb/2P |
Infineon?셲 New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
04/2014 |
|
BGA7H1BN6
|
1Mb/16P |
Insertion power gain: 12.3 dB
Revision 3.2, 2017-03-03 |
|
BGA700L16
|
245Kb/2P |
Low Noise Amplifier for IEEE 802.11a/b/g/n
|
 NXP Semiconductors |
BGA7014
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BGA7017
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BGA7020
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BGA7024
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BGA7027
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BGA7027
|
570Kb/19P |
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 1-11 August 2010 |
 Infineon Technologies A... |
BGA711L7
|
714Kb/23P |
Low Power Single-Band UMTS LNA
V3.2, May 2009 |
|
BGA711N7
|
1Mb/43P |
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Revision 3.1, 2013-01-31 |
 NXP Semiconductors |
BGA7124
|
337Kb/10P |
400 MHz to 2700 MHz 1/4 W high linearity Si amplifier
Rev. 00.07-16 July 2009 |
|
BGA7124
|
401Kb/33P |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Rev. 01-21 April 2010 |
|
BGA7124
|
9Mb/130P |
RF Manual 16th edition
June 2012 |