| Manufacturer | Part # | Datasheet | Description |
Unisonic Technologies |
3N180-E3
|
292Kb/7P
|
3.0A, 1800V N-CHANNEL POWER MOSFET
|
Vaishali Semiconductor |
3N187
|
486Kb/8P
|
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
New Jersey Semi-Conduct... |
3N187
|
88Kb/1P
|
N-CHANNEL, DUAL-GATE TETRODE MOSFET
|
Intersil Corporation |
3N188
|
75Kb/2P
|
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
|
|
3N188
|
4Mb/122P
|
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
3N188
|
71Kb/1P
|
DUAL MATCHED P-CHANNEL ENHANCEMENT MODE MOS FETS
|
Intersil Corporation |
3N189
|
75Kb/2P
|
DUAL P CHANNEL ENHANCEMENT MODE MOSFET
|
|
3N189
|
4Mb/122P
|
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
3N189
|
71Kb/1P
|
DUAL MATCHED P-CHANNEL ENHANCEMENT MODE MOS FETS
|
| Search Partnumber :
Start with "3N18" -
Total : 87 ( 1/5 Page) |
New Jersey Semi-Conduct... |
3N100
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
Motorola, Inc |
3N100E
|
262Kb/10P |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
|
|
3N100E
|
206Kb/8P |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
|
New Jersey Semi-Conduct... |
3N101
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
Infineon Technologies A... |
3N1012
|
192Kb/9P |
OptiMOS-T Power-Transistor
Rev. 1.0 2008-02-12 |
New Jersey Semi-Conduct... |
3N102
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
|
3N103
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
|
3N104
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
3M Electronics |
3N104-A000-S08BF
|
269Kb/1P |
INDUSTRIAL M12 WIRE MOUNT, FOR A-CODE, MALE, SOLDER TYPE
|
|
3N104-D000-S08BF
|
241Kb/1P |
INDUSTRIAL M12 WIRE MOUNT, FOR D-CODE, MALE, SOLDER TYPE
|
New Jersey Semi-Conduct... |
3N105
|
148Kb/1P |
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand