| Manufacturer | Part # | Datasheet | Description |
 Inchange Semiconductor ... |
2SK3600L
|
326Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Shenzhen Bencent Electr... |
B8G3600L
|
438Kb/3P
|
Gas Discharge Tube
|
 Panasonic Semiconductor |
DZ2W03600L
|
349Kb/5P
|
Silicon epitaxial planar type
2013-05-08
|
 HuaXinAn Electronics CO... |
H2R6M-3600L
|
197Kb/2P
|
2-Electrode Gas Discharge Tubes
|
|
H2R8-3600L
|
199Kb/2P
|
2-Electrode Gas Discharge Tubes
|
|
HA2R3600L
|
210Kb/2P
|
3KA High Voltage,Axial Lead Wire
|
 HUAAN LIMITED |
HA2R3600L
|
181Kb/2P
|
2-Electrode Gas Discharge Tubes
|
|
HA2R3600L
|
185Kb/2P
|
Electrode Gas Discharge Tubes
|
 HuaXinAn Electronics CO... |
HA2R6M-3600L
|
215Kb/2P
|
2-Electrode Gas Discharge Tubes
|
 Panasonic Semiconductor |
MA2Q73600L
|
241Kb/3P
|
Silicon epitaxial planar type For high frequency rectification
|
|
MA43600L
|
107Kb/7P
|
Silicon planar type
|
|
MA83600L
|
69Kb/5P
|
Silicon planar type
|
|
MAZ33600L
|
103Kb/7P
|
Silicon planar type
|
|
MAZ43600L
|
107Kb/7P
|
Silicon planar type
|
|
MAZS3600L
|
49Kb/4P
|
Silicon planar type
|
 InterFET Corporation |
NJ3600L
|
127Kb/2P
|
Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier
|
 UN Semiconducctor INC |
UN2E5-3600L
|
3Mb/6P
|
High Voltage Single Gas Discharge Tube
Revision March 1,2022
|