| Manufacturer | Part # | Datasheet | Description |
 AVX Corporation |
08051J4R7ABSTR
|
1Mb/19P
|
Thin-Film Technology
|
| Search Partnumber :
Start with "08051J4R7ABSTR" -
Total : 28 ( 1/2 Page) |
 AVX Corporation |
08051J4R7ABTTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7ABWTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7AASTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7AATTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7AAWTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BASTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BATTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BAWTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BBSTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BBTTR
|
1Mb/19P |
Thin-Film Technology
|
|
08051J4R7BBWTR
|
1Mb/19P |
Thin-Film Technology
|
 Freescale Semiconductor... |
08051J0R1BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
|
08051J0R3BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 NXP Semiconductors |
08051J0R4BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 Freescale Semiconductor... |
08051J0R4BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 NXP Semiconductors |
08051J0R5BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
08051J0R5BS
|
726Kb/12P |
RF LDMOS Integrated Power Amplifier
Rev. 3, 12/2010 |
 Freescale Semiconductor... |
08051J0R9BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 NXP Semiconductors |
08051J150GBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |