BSP742-R Manufacturer, Function, Datasheet

Manufacturer	Part #	Datasheet Date Size	Description	Rohs Pb Free Lifecycle	Direct Link
NXP Semiconductors	BSP100 /T3		N-channel enhancement mode TrenchMOS (tm) transistor - Configuration: Single N-channel ; I_D DC: 6 A; Q_gd (typ): 0.7 nC; R_DS(on): 100@10V200@4.5V mOhm; V_DSmax: 30 V	compliant no active
	BSP122 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.55 A; R_DS(on): 2500@10V mOhm; V_DSmax: 200 V	compliant no active
	BSP126 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.375 A; R_DS(on): 5000@10V mOhm; V_DSmax: 250 V	compliant no active
	BSP130 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.3 A; R_DS(on): 8000@10V mOhm; V_DSmax: 300 V	compliant no active
	BSP130,135		N-channel vertical D-MOS logic level FET SC-73 4-Pin	active
Nexperia	BSP130,135		N-channel vertical D-MOS logic level FET@en-us SC-73 4-Pin	active
onsemi	BSP16T1		High Voltage PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	no obsolete
onsemi	BSP16T1G		High Voltage PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	yes active
NXP Semiconductors	BSP19 T/R		NPN high-voltage transistors - fT min: 70 MHz; hFE max:>40 ; hFE min: 40 ; I_C max: 50 mA; Polarity: NPN ; Ptot max: 1200 mW; VCEO max: 350 V	compliant no active
onsemi	BSP19AT1		NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	no obsolete
onsemi	BSP19AT1G		NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL, Automotive Qualified	yes obsolete
NXP Semiconductors	BSP220 T/R		P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I_D DC: 0.225 A; R_DS(on): 12000@10V mOhm; V_DSmax: 200 V	compliant no active
NXP Semiconductors	BSP220,135		BSP220 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin	active
Nexperia	BSP220,135		BSP220 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin	active
NXP Semiconductors	BSP225 T/R		P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I_D DC: 0.225 A; R_DS(on): 15000@10V mOhm; V_DSmax: 250 V	compliant no active
	BSP230 /T3		P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I_D DC: 0.210 A; R_DS(on): 17000@10V mOhm; V_DSmax: 300 V	compliant no active
	BSP250 T/R		P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I_D DC: 3 A; R_DS(on): 250@10V400@4.5V mOhm; V_DSmax: 30 V	compliant no active
	BSP254A AMO		P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I_D DC: 0.2 A; R_DS(on): 15000@10V mOhm; V_DSmax: 250 V	compliant no active
	BSP304A AMO		P-channel enhancement mode vertical D-MOS transistors - Configuration: Single P-channel ; I_D DC: 0.17 A; R_DS(on): 17000@10V mOhm; V_DSmax: 300 V	compliant no active
	BSP31 T/R		PNP medium power transistors - Complement: BSP41 ; fT min: 100 MHz; hFE max: 300 ; hFE min: 100 ; I_C max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 60 V	compliant no active

BSP742-R Manufacturer

Link URL