DMC3025LSDQ-13 datasheet(4/11 Pages) DIODES

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DMC3025LSDQ

Document number: DS40186 Rev. 1 - 2

4 of 11

www.diodes.com

October 2017

DMC3025LSDQ

Electrical Characteristics P-CHANNEL

– Q1 (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

-1

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

-1.0

—

-2.0

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = -10V, ID = -5.2A

—

VGS = -4.5V, ID = -4A

Forward Transfer Admittance

|YFS|

—

VDS = -5V, ID = -5.2A

Diode Forward Voltage

VSD

—

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

590

—

VDS = -25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Gate resistance

—

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

5.1

—

VDS = -15V, ID = -6A

Total Gate Charge (VGS = 10V)

—

10.5

—

Gate-Source Charge

QGS

—

1.8

—

Gate-Drain Charge

QGD

—

1.9

—

Turn-On Delay Time

tD(ON)

—

6.8

—

VDD = -15V, VGS = -10V,

RG = 6Ω, ID = -1A

Turn-On Rise Time

—

4.9

—

Turn-Off Delay Time

tD(OFF)

—

28.4

—

Turn-Off Fall Time

—

12.4

—

Reverse Recovery Time

tRR

—

IF = 12A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

Notes:

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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