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CRO2AM Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part # CRO2AM
Description  LOW POWER USE PLANAR PASSIVATION TYPE
PDF  5 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CRO2AM Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
23
100
57 101 23 5 7 102 23 5 7 103
120
0
80
100
40
60
20
# 1
# 2
TYPICAL EXAMPLE
# 1 IGT (25
°C)=10µA
# 2 IGT (25
°C)=66µA
Tj = 125
°C, RGK = 1kΩ
160
120
100
40
60
20
0
160
–40 –20
20
80
140
120
80
140
060
40
100
TYPICAL EXAMPLE
23
10–1
57 100 23 5 7 101 23 5 7 102
0
200
300
400
500
100
# 1
# 2
23
10–1
57 100 23 5 7 101 23 5 7 102
120
0
80
100
40
60
20
Tj = 125
°C
TYPICAL EXAMPLE
60
–20
–40
–60
0
20 40
80 100 120 140
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
TYPICAL
EXAMPLE
DISTRIBUTION
103
23 4
100
57 101
23 4 5 7 102
7
5
4
3
2
7
5
4
3
2
102
101
# 1
# 2
TYPICAL EXAMPLE
IGT (25
°C)
# 1
10
µA
# 2
66
µA
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
Ω)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
Ω)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE CURRENT PULSE WIDTH (
µs)
Tj = 25
°C
IH (25
°C)=1mA
IGT (25
°C)=25µA
Tj = 25
°C
Tj = 25
°C
TYPICAL EXAMPLE
IGT (25
°C) IH (1kΩ)
# 1
13
µA
1.6mA
# 2
59
µA
1.8mA



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