BU808DFH datasheet(2/7 Pages) STMICROELECTRONICS

Part #	BU808DFH

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 7 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.98

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1400 V

400

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

1.6

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

2.1

hFE

∗

DC Current Gain

IC = 5 A

VCE = 5 V

IC = 5 A

VCE = 5 V

TC = 100

o C

230

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 150 V

IC = 5 A

IB1 = 0.5 A

VBE(off) = -5 V

0.8

µs

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 150 V

IC = 5 A

IB1 = 0.5 A

VBE(off) = -5 V

TC = 100

0.8

µs

Diode Forward Voltage

IF = 5 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BU808DFH

2/7

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