SSPF7490N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSPF7490N

8.3A, 150V, RDS(ON) 48 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

11-May-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Gate-Source Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

VDS=120V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=120V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=10V

VGS=10V, ID=8.3A

Drain-Source On-Resistance

RDS(ON)

VGS=5.5V, ID=6.4A

Forward Transconductance

gfs

VDS=15V, ID=8.3A

Diode Forward Voltage

VSD

0.74

IS=3.6A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=75V

VGS=5.5V

ID=8.3A

Input Capacitance

Ciss

4388

Output Capacitance

Coss

260

Reverse Transfer Capacitance

Crss

239

VDS=15V

VGS=0

f=1MHz

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

122

Fall Time

VDS=75V

VGEN=10V

ID=8.3A

RL=9.1

RGEN=6

Notes:

Pulse test：Pulse width≦300µs, duty cycle≦2%.

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