SSG07N10J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSG07N10J

7A , 100V , RDS(ON) 28m

N-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

100

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=80V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VDS=0V, VGS=±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

1.2

VDS=VGS, ID=250µA

VGS=10V, ID=7A

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=5A

Forward Transconductance

gFS

VGS=5V, ID=7A

Dynamic Characteristics

Input Capacitance

Ciss

1848

Output Capacitance

Coss

276

Reverse Transfer Capacitance

Crss

97.9

VGS=0

VDS=15V

f=1MHz

Switching Characteristics

Total Gate Charge

31.9

Gate-Source Charge

Qgs

5.5

Gate-Drain (“Miller”) Change

Qgd

8.8

VDS=80V

VGS=10V

ID=7A

Turn-on Delay Time

Td(on)

11.4

Rise Time

27.2

Turn-off Delay Time

Td(off)

34.7

Fall Time

16.6

VDD=50V

VGS=10V

RG=3.3

RL=6.7

ID=7A

Gate Resistance

1.9

VDS=0V, VGS=0, f=1MHz

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.2

VGS=0, IS=1A

Continuous Source Current

Pulsed Source Current

ISM

Notes:

1. Pulse Test: Pulse width≦300µs,duty cycle≦2%.

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