SSD14N02E datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSD14N02E

14.7A, 20V, RDS(ON) 19.5 m

N-Ch Enhancement Mode Power MOSFET

22-Feb-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

VDS=16V, VGS=0, TJ=25°C

Drain-Source Leakage Current

IDSS

µA

VDS=16V, VGS=0, TJ=85°C

Gate-Source Leakage Current

IGSS

±10

µA

VDS=0V, VGS= ±10V

Gate-Threshold Voltage

VGS(th)

0.5

0.7

1.2

VDS=VGS, ID=250µA

19.5

VGS=4.5V, ID=10A

Static Drain-Source On-Resistance

RDS(ON)

26.5

VGS=2.5V, ID=5A

Input Capacitance

Ciss

630

Output Capacitance

Coss

105

Reverse Transfer Capacitance

Crss

100

VDS=15V

VGS=0

f=1MHz

Total Gate Charge

Gate-Source Charge

Qgs

1.4

Gate-Drain (“Miller”) Charge

Qgd

4.4

VDS=10V

VGS=4.5V

ID=10A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=10V

VGS=4.5V

RG=6

RL=10

ID=1A

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.3

IS=1.3A, VGS=0

Continuous Source Current

1,4

14.7

Pulsed Source Current

2,4

ISM

VG=VD=0V, Force Current

Reverse Recovery Time

TRR

Reverse Recovery Charge

QRR

IF=10A, dl/dt=100A/µs, TJ=25°C

Notes:

The data is tested when the surface of the device is mounted on a 1 inch

2 FR-4 board with 2OZ copper.

The data is tested by the pulse: Pulse width≦300µs, duty cycle≦2%.

The Power dissipation is limited by 150°C juncti on temperature.

The data is theoretically the same as ID and IDM, in real applications, the data should be limited by the total power dissipation.

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