LARONTROL

Electronic Devices

Distributed by

USA

3540 Bassett Street

Santa Clara, CA 95054

Phone: (408) 982-0700

FAX: (408) 496-0670

EUROPE

IXYS Semiconductor GmbH

Lampertheim Germany

Phone: +49.6206.503.0

Fax: +49.6206.503.627

www.IXYS.

com

Type

Number

Repetitive

Peak

Minimum

Avalanche

Voltage

V

(BR)R

CIRCUIT DIAGRAM

IXYS reserves the right to change limits, test conditions and dimensions.

HTZ110A Series

High Voltage

I

Diode Rectifier

V

Module

C e ntre Ta p

_

+

CURRENT RATINGS - AIR COOLED

I

F(AV)

Mean forward current

Half wave resistive load T

3.5

A

I

F

Continuous (direct) forward current

T

4.3

A

R

th(j-a)

Thermal resistance junction to ambient

2.3 ºC/W

CURRENT RATINGS - OIL COOLED

I

F(AV)

Mean forward current

Half wave resistive load T

5.7

A

I

T

Continuous (direct) forward current

T

7.0

A

R

th(j-o)

Thermal resistance junction to oil

0.93 ºC/W

SURGE RATINGS

10 ms half sine T

I

FSM

Surge (non-repetitive) forward current

T

200

A

TEMPERATURE AND FREQUENCY RATINGS

T

vj

Virtual junction temperature

Forward (conducting)

180

ºC

Reverse (blocking)

180

ºC

T

stg

Storage temperature range

-40 to 100

ºC

f

Frequency range

20 to 400

Hz

CHARACTERISTICS

T

V

FM

Forward voltage

At 12 Amps peak

max 18.3

V

I

RM

Peak reverse current

At V

max 0.5

mA

HTZ110A25K

25000

27200

HTZ110A22K

22000

24000

HTZ110A19K

19000

20800

HTZ110A16K

16000

17600

Dimensioned Outlines

Dimensions shown are maximum in mm

Weight typ.: 1,55 Kg

Issue 1 June 1998

368

48

48

348

150

150

300

6.8 DIA

TAPPED M6, 3 OFF

BOTH ENDS

ZA