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SW4459 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW4459 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2016. Rev. 2.0 1/6 SW4459 63oC/W on a 1 in2 pad of 2oz copper. P-channel Enhanced mode SOP-8 MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage -30 V I D Continuous drain current (@T C=25 oC) -6.5* A Continuous drain current (@T C=100 oC) -4.1* A I DM Drain current pulsed (note 1) -26 A V GS Gate to source voltage ± 20 V dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 1.98 W Derating factor above 25oC 0.02 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thja Thermal resistance, Junction to ambient(note) 63 oC/W *. Drain current is limited by junction temperature. BV DSS : -30V I D : -6.5A R DS(ON) : 37mΩ @VGS=-10V 54m Ω @V GS=-4.5V SOP-8 G D S Order Codes Item Sales Type Marking Package Packaging 1 SW K 4459 SW4459 SOP-8 REEL Features High ruggedness Low R DS(ON) (Typ 37mΩ)@VGS=-10V Low R DS(ON) (Typ 54mΩ)@VGS=-4.5V Low Gate Charge (Typ 12.5nC) Improved dv/dt Capability 100% Avalanche Tested Application: DC-DC Converter, Motor Control General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics. D D D D G S S S Note: R thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. R thjc is guaranteed by design while Rthca is determined by the user's board design. |
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