STM32L151VC datasheet(83/136 Pages) STMICROELECTRONICS

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STM32L151xC STM32L152xC

Electrical characteristics

109

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114, ANSI/ESD STM5.3.1. standard.

Table 39. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. frequency range

Unit

4 MHz

voltage

range 3

16 MHz

voltage

range 2

32 MHz

voltage

range 1

SEMI

Peak level

VDD = 3.3 V,

TA = 25 °C,

LQFP100 package

compliant with IEC

61967-2

0.1 to 30 MHz

-6

-5

dBµV

30 to 130 MHz

-7

130 MHz to 1GHz

-7

SAE EMI Level

2.5

Table 40. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic

discharge voltage

(human body model)

TA = +25 °C, conforming

to JESD22-A114

2000

VESD(CDM)

Electrostatic

discharge voltage

(charge device model)

TA = +25 °C, conforming

to ANSI/ESD STM5.3.1.

500

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