STBV42D datasheet(3/8 Pages) STMICROELECTRONICS

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STBV42D

Electrical characteristics

Doc ID 17236 Rev 2

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Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 700 V

TC = 125 °C

IEBO

Emitter cut-off current

(IC = 0)

VEB = 9 V

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter sustaining

voltage (IB = 0)

IC = 1 mA

400

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 0.25 A

IB = 50 mA

IC = 0.5 A

IB = 125 mA

IC = 0.75 A

IB = 250 mA

0.2

0.3

0.4

0.5

1.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 0.25 A

IB = 50 mA

IC = 0.5 A

IB = 125 mA

1.2

hFE

(1)

DC current gain

IC = 5 mA,

VCE = 2 V

IC = 0.4 A,

VCE = 5 V

IC = 0.8 A

VCE = 5 V

Inductive Load

Fall time

IC = 0.25 A _ Vclamp = 300 V

IB(on) = -IB(off) = 50 mA

L = 3 mH

Figure 2

0.3

µs

Diode forward voltage

IF = 350 mA

1.7

Obsolete

Product(s)

- Obsolete

Product(s)

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