DocID025000 Rev 3

5/23

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 400 V, I

D

= 1.25

A, R

G

=4.7

Ω, V

GS

=10 V

-8.5

-

ns

t

r

Rise time

-

7.5

-

ns

t

d(off)

Turn-off delay time

-

20.5

-

ns

t

f

Fall time

-

25

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

2.5

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

10

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 2.5 A, V

GS

=0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 2.5 A, V

DD

= 60 V

di/dt = 100 A/μs,

-

265

ns

Q

rr

Reverse recovery charge

-

1.2

μC

I

RRM

Reverse recovery current

-

9.2

A

t

rr

Reverse recovery time

I

SD

= 2.5 A,V

DD

= 60 V

di/dt=100 A/μs,

Tj=150 °C

-

430

ns

Q

rr

Reverse recovery charge

-

1.9

μC

I

RRM

Reverse recovery current

-

8.8

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1mA, I

D

= 0

30

-

-

V