ADR510ART-R2 datasheet(4/8 Pages) AD

4 / 8 page

REV. 0

–4–

ADR510

PARAMETER DEFINITIONS

Temperature Coefficient

This is the change of output voltage with respect to the operating

temperature changes, normalized by the output voltage at 25

°C.

This parameter is expressed in ppm/

°C and can be determined

with the following equation

TCV

ppm











 =

()− ()

()×−

()

(1)

where:

VO(25

°C) = V

O at 25

°C

VO(T1) = VO at Temperature 1

VO(T2) = VO at Temperature 2

Thermal Hysteresis

Thermal hysteresis is defined as the change of output voltage

after the device is cycled through the temperature from 25

°C to

°C to 70°C and back to 25°C. This is a typical value from a

sample of parts put through such a cycle.

ppm

HYS

=°

()−

[] =

()−

()

(2)

where:

VO(25

°C) = V

O at 25

°C

VO_TC = VO at 25

°C after temperature cycle at 25°C to –40°C

to 85

°C and back to 25°C

APPLICATIONS SECTION

The ADR510 is a 1.0 V precision shunt voltage reference. It

is designed to operate without an external output capacitor

between the positive and negative terminals for stability. An exter-

nal capacitor can be used for additional filtering of the supply.

As with all shunt voltage references, an external bias resistor

(RBIAS) is required between the supply voltage and the ADR510

(see Figure 1). RBIAS sets the current that is required to pass

through the load (IL) and the ADR510 (IQ). The load and the

supply voltage can vary, thus RBIAS is chosen based on

• R

BIAS must be small enough to supply the minimum IQ cur-

rent to the ADR510 even when the supply voltage is at its

minimum and the load current is at its maximum value.

• RBIAS also needs to be large enough so that IQ does not

exceed 10 mA when the supply voltage is at its maximum

and the load current is at its minimum.

Given these conditions, RBIAS is determined by the supply

voltage (VS), the load and operating current (IL and IQ) of the

ADR510, and the ADR510’s output voltage.

R(V

) (I

I )

BIAS

OUT

–/

(3)

TIME (2 s/DIV)

DIIN = 100 A

VOUT = 50mV/DIV

TPC 7. Output Response to 100

µA Input Current

Change with 1

µF Capacitor

TIME (400ms/DIV)

2 V/DIV

TPC 8. 1 Hz to 10 Hz Noise

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