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2SD723 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD723 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD723 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) · DC Current Gain -hFE = 50(Min)@ IC= 0.5A · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amplifier and switching applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 6 A IB Base Current 1 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ |
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Similar Description - 2SD723 |
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