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2SD155 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD155 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD155 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 60 320 hFE-2 DC Current Gain IC= 2A; VCE= 2V 20 COB Output Capacitance IE=0; VCB= 10V; f= 1MHz 40 pF |
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